FDS6930A Description
RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON).
FDS6930A Datasheet
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDS6930A | Dual N-Channel MOSFET |
Kexin Semiconductor |
FDS6930B | Dual N-Channel MOSFET |
RDS(ON) = 0.040 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Low gate charge (typical 5 nC). High performance trench technology for extremely low RDS(ON).