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Fairchild Semiconductor Electronic Components Datasheet

FDS7088N7 Datasheet

30V N-Channel PowerTrench MOSFET

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February 2004
FDS7088N7
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
23 A, 30 V
RDS(ON) = 3 m@ VGS = 10 V
RDS(ON) = 4 m@ VGS = 4.5 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7088N7
FDS7088N7
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±20
23
60
3.0
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
A
W
°C
°C/W
Quantity
2500 units
FDS7088N7 Rev D1 (W)


Fairchild Semiconductor Electronic Components Datasheet

FDS7088N7 Datasheet

30V N-Channel PowerTrench MOSFET

No Preview Available !

www.DataSheet4U.com
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = 250 µA
30
V
BVDSS
TJ
Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C
Coefficient
25 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V
10 µA
IGSS Gate–Body Leakage
VGS = ±20 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
gFS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 23 A
VGS = 4.5 V, ID = 21 A
VGS = 10 V, ID = 23 A, TJ = 125°C
VDS = 10 V, ID = 23 A
1
1.9 3
V
–6 mV/°C
2.4 3
3.3 4
3.5 5.5
112
m
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
3845
930
pF
pF
Crss Reverse Transfer Capacitance
368 pF
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.4
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
(Note 2)
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
15 27
13 23
ns
ns
td(off) Turn–Off Delay Time
62 99
ns
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
VDS = 15 V,
VGS = 5.0 V
ID = 23 A,
36 58
ns
37 48 nC
10 nC
Qgd Gate–Drain Charge
14 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
2.5
0.7 1.2
A
V
trr
Diode Reverse Recovery Time
IF = 23 A,
Qrr Diode Reverse Recovery Charge diF/dt = 100 A/µs
39 nS
33 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7088N7 Rev D1 (W)


Part Number FDS7088N7
Description 30V N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
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FDS7088N7 Datasheet PDF






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