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FDS7296N3 - 30V N-Channel PowerTrench MOSFET

General Description

This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters.

Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies.

Key Features

  • 15 A, 30 V RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 11 mΩ @ VGS = 4.5 V.
  • High performance trench technology for extremely low RDS(ON).
  • Optimized for low Qgd to enable fast switching and reduced CdV/dt gate coupling.
  • SO-8 FLMP for enhanced thermal performance in an industry-standard package outline.

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FDS7296N3 September 2004 FDS7296N3 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for high and low side switch applications in Point of Load converters. Applications • Secondary side Synchronous rectifier • Synchronous Buck VRM and POL Converters Features • 15 A, 30 V RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 11 mΩ @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • Optimized for low Qgd to enable fast switching and reduced CdV/dt gate coupling.