Datasheet Details
| Part number | FDS86141 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.75 KB |
| Description | MOSFET |
| Download | FDS86141 Download (PDF) |
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| Part number | FDS86141 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 234.75 KB |
| Description | MOSFET |
| Download | FDS86141 Download (PDF) |
|
|
|
Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Applications DC-DC Conversion D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Ch
FDS86141 N-Channel Power Trench® MOSFET May 2015 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDS86141 | N-Channel MOSFET | ON Semiconductor |
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