r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power an.

DC/DC converters www.DataSheet4U.com Branding Dash 5 5 4 3 2 1 6 7 1 2 3 4 8 SO-8 ©2005 Fairchild Semiconductor.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching .

FDS8882

FDS8884

FDS8812NZ

FDS8813NZ

FDS8817NZ

FDS8840NZ

FDS8842NZ

FDS8858CZ

FDS8870

FDS8874

FDS8876

FDS8878

FDS8878-F123