FDS8880
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
- rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A
- rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
- RoHS Compliant
