Datasheet Summary
FDS8880 N-Channel PowerTrench® MOSFET
FDS8880 N-Channel PowerTrench® MOSFET
30V, 11.6A, 10mΩ
Features
- rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A
- rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A
- High performance trench technology for extremely low rDS(on)
- Low gate charge
- High power and current handling capability
- RoHS pliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
- DC/DC converters
Branding Dash
5 1
2 3 4
SO-8
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