Datasheet Details
| Part number | FDS8884 |
|---|---|
| Manufacturer | onsemi |
| File Size | 406.67 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FDS8884 Datasheet
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General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Key Features
- Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A.
- Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A.
- Low gate charge.
- 100% RG Tested.
- RoHS Compliant D D D D 5 4 6 3 SO-8 G SS S 7 2 8 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current Continuous ID Pulsed (Note 1a) EAS Single Pulse Avalanche Energy Power dissipation PD Derate above 25oC (Note 2.