Datasheet Details
| Part number | FDS8882 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 293.09 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8882_FairchildSemiconductor.pdf |
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Overview: FDS8882 N-Channel PowerTrench® MOSFET FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.
| Part number | FDS8882 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 293.09 KB |
| Description | N-Channel MOSFET |
| Datasheet | FDS8882_FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant The FDS8882 has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications Notebook System Regulators DC/DC Converters D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 3) (Note 1a) (Note 1b) Ratings 30 ±20 9 21 32 2.5 1.0 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 25 (Note 1a) 50 °C/W Device Marking FDS8882 Device FDS8882 Package SO8 Reel Size 13 “ Tape Width 12 mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation 1 FDS8882 Rev.C www.fairchildsemi.com FDS8882 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 µA, VGS = 0 V ID = 250 µA, referenced to 25 °C VDS = 24 V, VGS = 0 V VGS = ±20 V, VDS =
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