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FDS8882 - N-Channel MOSFET

General Description

Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS

Key Features

  • General.

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FDS8882 N-Channel PowerTrench® MOSFET FDS8882 N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 mΩ December 2008 Features General Description „ Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A „ Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A „ High performance trench technology for extremely low rDS(on) and fast switching „ High power and current handling capability „ Termination is Lead-free and RoHS Compliant The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.