FDS8882 Datasheet | Fairchild Semiconductor

FDS8882 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30 V, 9 A, 20.0 mΩ December 2008 Features General Description - Max r DS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A - Max r DS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A - High performance trench technology for extremely low r DS(on) and fast switching - High power and current handling capability - Termination is Lead-free and Ro HS pliant The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. Applications - Notebook System Regulators - DC/DC Converters SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation TA = 25...