Datasheet Summary
FDS8880 N-Channel PowerTrench® MOSFET
April 2005
FDS8880 N-Channel PowerTrench® MOSFET
30V, 11.6A, 10mΩ Features r DS(ON) = 10mΩ, VGS = 10V, ID = 11.6A r DS(ON) = 12mΩ, VGS = 4.5V, ID = 10.7A High performance trench technology for extremely low r DS(ON) Low gate charge High power and current handling capability
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
Applications
DC/DC converters
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