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FDS8880 - N-Channel MOSFET

Key Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed Typical.

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Freescale N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits FDS8880/ MC8880 VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 11 @ VGS = 10V 12 @ VGS = 4.5V ID(A) 16.8 16.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25°C TA=70°C ID IDM IS 16.8 14.2 100 5.1 Power Dissipation a TA=25°C TA=70°C PD 3.1 2.