Datasheet Summary
FDS8884 N-Channel PowerTrench® MOSFET
February 2006
N-Channel PowerTrench® MOSFET
30V, 8.5A, 23mΩ General Descriptions
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
REE I DF
Features
- Max rDS(on) = 23mΩ at VGS = 10V, ID = 8.5A
- Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.5A
- Low gate charge
- 100% RG Tested
- RoHS pliant
M ENTATIO LE N MP
..
5 6 7 8
4 3 2 1
SO-8
MOSFET Maximum Ratings
Symbol VDS VGS ID EAS PD TJ, TSTG...
