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FDS8958B Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.

These devices are well suite d for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Application „ RoHS Compliant „ DC-DC Conversion „ BLU and motor drive inverter D2

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A.
  • Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel.
  • Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A.
  • Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A.
  • HBM ESD protection level > 3.5 kV (Note 3) General.

FDS8958B Distributor & Price

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Similar Datasheet

Brand Logo Part Number Description Manufacturer
ON Semiconductor Logo FDS8958B Dual N & P-Channel Power MOSFET ON Semiconductor
ON Semiconductor Logo FDS8958A-F085 Dual N&P-Channel MOSFET ON Semiconductor

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