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FDS8958B Datasheet Dual N & P-channel Power MOSFET

Manufacturer: onsemi

Overview: FDS8958B Dual N & P-Channel PowerTrench® MOSFET FDS8958B Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance.

These devices are well suite d for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Application „ DC-DC Conversion „ BLU and motor drive inverter D2 D2 D1 D1 Pin 1 G2 S2 G1 S1 Q2 D2 5 D2 6 Q1 D1 7 D1 8 4 G2 3 S2 2 G1 1 S1 SO-8 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TA = 25 °C TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) (Note 4) Thermal Characteristics Q1 Q2 30 -30 ±20 ±25 6.4 -4.5 30 -30 2.0 1.6 0.9 18 5 -55 to +150 Units V V A W mJ °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) 40 (Note 1a) 78 °C/W Device Marking FDS8958B Device FDS8958B Package SO-8 Reel Size 13 ” Tape Width 12 mm Quantity 2500 units ©2008 Semiconductor ponents Industries, LLC.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A.
  • Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel.
  • Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A.
  • Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A.
  • HBM ESD protection level > 3.5 kV (Note 3).
  • RoHS Compliant General.

Similar Datasheet

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