FDS8958B
Overview
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state resistan ce and yet maintain superior switching performance. These devices are well suite d for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
- Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel
- Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
- Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
- HBM ESD protection level > 3.5 kV (Note 3)
