| Part Number | FDS8958B |
|---|---|
| Manufacturer | onsemi |
| Overview |
These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on-state .
Q1: N-Channel * Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A * Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel * Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A * Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A * HBM ESD protection level > 3.5 kV (Note 3) * RoHS Compliant General Des. |
FDS8958B Datasheet
The FDS8958B is a Dual N & P-Channel Power MOSFET.
| Part Number | FDS8958B |
|---|---|
| Description | MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench® process th at has been especially tailored to minimize on.
Q1: N-Channel * Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A * Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A Q2: P-Channel * Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A * Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A * HBM ESD protection level > 3.5 kV (Note 3) General Description These du. |