FDT86102LZ MOSFET

Fairchild Semiconductor

Description

FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ .
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

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Datasheet Specifications

Part number: FDT86102LZ
Manufacturer: Fairchild Semiconductor
File Size: 261.83 KB
Datasheet: FDT86102LZ-FairchildSemiconductor.pdf
Description: MOSFET

Features

* Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.6 A
* Max rDS(on) = 38 mΩ at VGS = 4.5 V, ID = 5.5 A
* HBM ESD protection level > 6 kV typical (Note 4)
* Very low Qg and Qgd compared to competing trench technologies
* Fast switching speed
* 100% UIL Tested

Applications

* DC-DC conversion
* Inverter
* Synchronous Rectifier D SOT-223 S D G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse

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FDT86102LZ MOSFET Fairchild Semiconductor

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