mosfet.
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* Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A
* High performance trench technology .
* Max rDS(on) = 100 m: at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 145 m: at VGS = 4.5 V, ID = 2.7 A
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability in a widely used
surface m.
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