Datasheet Details
| Part number | FDT86244 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 228.24 KB |
| Description | MOSFET |
| Datasheet | FDT86244-FairchildSemiconductor.pdf |
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Overview: FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET January 2016 FDT86244 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 2.
| Part number | FDT86244 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 228.24 KB |
| Description | MOSFET |
| Datasheet | FDT86244-FairchildSemiconductor.pdf |
|
|
|
Shielded Gate MOSFET Technology Max rDS(on) = 128 mΩ at VGS = 10 V, ID = 2.8 A Max rDS(on) = 178 mΩ at VGS = 6 V, ID = 2.4 A High Performance Trench Technology for Extremely Low rDS(on) High Power and Current Handling Capability in a Widely Used Surface Mount Package Fast Switching Speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.
This process has been optimized for rDS(on), switching performance and ruggedness.
Applications Load Switch Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuo
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FDT86244 | N-Channel MOSFET | ON Semiconductor |
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