Datasheet Details
| Part number | FDT86246 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 235.41 KB |
| Description | MOSFET |
| Datasheet | FDT86246-FairchildSemiconductor.pdf |
|
|
Overview: FDT86246 N-Channel Power Trench® MOSFET December 2010 FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236.
| Part number | FDT86246 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 235.41 KB |
| Description | MOSFET |
| Datasheet | FDT86246-FairchildSemiconductor.pdf |
|
|
|
Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications Load Switch Primary Switch D SOT-223 S D G D GDS MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperatur
Compare FDT86246 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
FDT86246 | N-Channel MOSFET | ON Semiconductor |
|
FDT86246L | N-Channel MOSFET | ON Semiconductor |
| Part Number | Description |
|---|---|
| FDT86246L | N-Channel PowerTrench MOSFET |
| FDT86244 | MOSFET |
| FDT86256 | MOSFET |
| FDT86102LZ | MOSFET |
| FDT86106LZ | MOSFET |
| FDT86113LZ | MOSFET |
| FDT1600N10ALZ | MOSFET |
| FDT3612 | 100V N-Channel PowerTrench MOSFET |
| FDT3N40 | MOSFET |
| FDT434P | P-Channel MOSFET |