FDU6696 Key Features
- 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V
- Low gate charge (17nC typical)
- Fast switching
- High performance trench technology for extremely low RDS(ON)
| Part Number | Description |
|---|---|
| FDU6692 | N-Channel MOSFET |
| FDU6612A | 30V N-Channel MOSFET |
| FDU6644 | 30V N-Channel MOSFET |
| FDU6680 | 30V N-Channel MOSFET |
| FDU6688 | N-Channel MOSFET |