FDU6692 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features - 54 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14.5 mΩ @ VGS = 4.5 V - Low gate charge (18 n C typical) - Fast switching Applications - DC/DC converter - Motor drives - High performance trench technology for extremely low RDS(ON) I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) TA=25o C unless otherwise noted Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 ±16 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units 54 162 57 3.8 1.6 -55 to +175 Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.6 40 96 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDD6692 FDU6692 Device FDD6692 FDU6692 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 2001 Fairchild Semiconductor...