FDU6696 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features - 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V - Low gate charge (17n C typical) - Fast switching - High performance trench technology for extremely low RDS(ON) Applications - DC/DC converter - Motor drives I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) T A=25o C unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 ± 16 50 13 100 52 3.8 1.6 - 55 to +175 Unit s Power Dissipation @TC=25°C @TA =25°C @TA =25°C TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.9 40 96 °C/W Package Marking and Ordering Information Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units...