FDU6680 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance. Features - 46 A, 30 V RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V - Low gate charge - Fast Switching Speed - High performance trench technology for extremely low RDS(ON) Applications - DC/DC converter - Motor Drives I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) Absolute Maximum Ratings Symbol VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage TA=25o C unless otherwise noted Parameter Ratings 30 ±20 (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Units Continuous Drain Current @TC=25°C @TA=25°C Pulsed 46 12 100 56 3.3 1.5 - 55 to +175 Power Dissipation @TC=25°C @TA=25°C @TA=25°C TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.7 45...