FDU6644 Datasheet | Fairchild Semiconductor

Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 67 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V Applications - DC/DC converter - High performance trench technology for extremely low RDS(ON) - Low gate charge (25 n C typical) - High power and current handling capability I-PAK (TO-251AA) G D S D-PAK TO-252 (TO-252) Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25o C unless otherwise noted Parameter Ratings 30 ±16 (Note 1a) Units 67 100 68 3.8 1.6 -55 to +175 (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1b) 2.2 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD6644 FDU6644 Device FDD6644 FDU6644 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 2001 Fairchild Semiconductor Corporation FDD/FDU6644 Rev...