FDW2503NZ
Description
This N -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process.
Key Features
- 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V
- Extended V GSS range (±12V) for battery applications
- ESD protection diode (note 3)
- High performance trench technology for extremely low RDS(ON)
- Low profile TSSOP-8 package
Applications
- Motor drive
