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FGA25N120ANTDTU Datasheet - Fairchild Semiconductor

IGBT

FGA25N120ANTDTU Features

* NPT Trench Technology, Positive Temperature Coefficient

* Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C

* Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C

* Extremely Enhanced Avalanche Capability Applications

* Ind

FGA25N120ANTDTU General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heatin.

FGA25N120ANTDTU Datasheet (1.27 MB)

Preview of FGA25N120ANTDTU PDF

Datasheet Details

Part number:

FGA25N120ANTDTU

Manufacturer:

Fairchild Semiconductor

File Size:

1.27 MB

Description:

Igbt.

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TAGS

FGA25N120ANTDTU IGBT Fairchild Semiconductor

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