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Fairchild Semiconductor Electronic Components Datasheet

FGH40T65SH Datasheet

Field Stop Trench IGBT

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FGH40T65SH
650 V, 40 A Field Stop Trench IGBT
June 2015
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.6 V(Typ.) @ IC = 40 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
Solar Inverter, UPS, Welder, Telecom, ESS, PFC
C
G CE
TO-247
long leads
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Description
VCES
VGES
IC
ILM (1)
ICM (2)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1. VCC = 400 V, VGE = 15 V, IC =120 A, RG = 41.6  Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
E
FGH40T65SH
650
20
30
80
40
120
120
268
134
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
W
W
oC
oC
oC
©2014 Fairchild Semiconductor Corporation
FGH40T65SH Rev. 1.0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FGH40T65SH Datasheet

Field Stop Trench IGBT

No Preview Available !

Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FGH40T65SH
0.56
40
Unit
oC/W
oC/W
Package Marking and Ordering Information
Part Number
FGH40T65SH_F155
Top Mark
FGH40T65SH
Package Packing Method Reel Size Tape Width Quantity
TO-247 G03
Tube
- - 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
BVCES /
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1 mA
IC = 1 mA, Reference to 25oC
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 mA, VCE = VGE
IC = 40 A, VGE = 15 V
ITCC==4107A5,oVCGE = 15 V,
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive,LVoGaEd,=T1C5=V2, 5oC
VCC = 400 V, IC = 40 A,
RInGdu=ct6ive,LVoGaEd,=T1C5=V1, 75oC
650 - - V
- 0.6 - V/oC
- - 250 A
-
-
±400
nA
4.0 5.5 7.5
- 1.6 2.1
- 2.14 -
V
V
V
- 1995 -
- 70 -
- 23 -
- 19.2 -
- 34.4 -
- 65.6 -
- 9.6 -
- 1010 -
- 297 -
- 1307 -
- 18.4 -
- 32.8 -
- 71.2 -
- 14.4 -
- 1390 -
- 541 -
- 1931 -
pF
pF
pF
ns
ns
ns
ns
uJ
uJ
uJ
ns
ns
ns
ns
uJ
uJ
uJ
©2014 Fairchild Semiconductor Corporation
FGH40T65SH Rev. 1.0
2
www.fairchildsemi.com


Part Number FGH40T65SH
Description Field Stop Trench IGBT
Maker Fairchild Semiconductor
Total Page 8 Pages
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