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FJB102 Datasheet High Voltage Power Darlington Transistor

Manufacturer: Fairchild (now onsemi)

Overview

FJB102 — NPN High-Voltage Power Darlington Transistor December 2014 FJB102 NPN High-Voltage Power Darlington.

Key Features

  • High DC Current Gain : hFE = 1000 at VCE = 4 V, IC = 3 A (Minimum).
  • Low Collector-Emitter Saturation Voltage Equivalent Circuit C B 1 D2-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number FJB102TM Top Mark FJB102 R1 3 ≅ LΩ 3 ≅ LΩ R2 E Package TO-263 2L (D2PAK) Packing Method Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommend.