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FPA108 - Light Reflection Emitter / Sensor Array

This page provides the datasheet information for the FPA108, a member of the FPA103 Light Reflection Emitter / Sensor Array family.

Description

The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor.

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Other Datasheets by Fairchild Semiconductor
  • FPA100 - Emitter And Sensor Matched Pair Arrays
  • FPA101 - Emitter And Sensor Matched Pair Arrays
  • FPA102 - Emitter And Sensor Matched Pair Arrays
  • FPA103 - Light Reflection Emitter / Sensor Array
  • FPA104 - Light Reflection Emitter / Sensor Array
  • FPA105 - Light Reflection Emitter / Sensor Array
  • FPA106 - Light Reflection Emitter / Sensor Array
  • FPA107 - Light Reflection Emitter / Sensor Array

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Light Reflection Emitter / Sensor Array Optoelectronic Products 4-8 FPA103,FPA104 FPA105,FPA106 FPA107,FPA108 General Description The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefore, the phototransistorresponds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the phototransistor. The diode used in theFPA 103/104/105/106/1071 108 is similar to Fairchild's FPE104 GaAs infraredemitting diode. I.t emits an intense, narrow band of radiation, peaking at approximately 900 nm (nonvisible) when forward biased.
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