FQA28N50 mosfet equivalent, 500v n-channel mosfet.
* 28.4 A, 500 V, RDS(on) = 160 mΩ (Max.) @ VGS = 10 V, ID = 14.2 A
* Low Gate Charge (Typ. 110 nC)
* Low Crss (Typ. 60 pF)
* 100% Avalanche Tested
* R.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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