FQA8N80C_F109 Key Features
- 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V
- Low gate charge ( typical 35 nC)
- Low Crss ( typical 13pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- Part: FQA8N80C_F109
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 786.84 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FQA8N80C | 800V N-Channel MOSFET |
| FQA8N80 | 800V N-Channel MOSFET |
| FQA8N100C | MOSFET |
| FQA8N90C | 900V N-Channel MOSFET |
| FQA8N90C_F109 | N-Channel QFET MOSFET |