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FQA8N80 Datasheet 800v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA8N80 March 2001 QFET FQA8N80 800V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies..

Key Features

  • 8.4A, 800V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Dra.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQA8N80C 800V N-Channel MOSFET
FQA8N80C_F109 MOSFET
FQA8N100C MOSFET
FQA8N90C 900V N-Channel MOSFET
FQA8N90C_F109 N-Channel QFET MOSFET
FQA85N06 60V N-Channel MOSFET
FQA10N60C 600V N-Channel MOSFET
FQA10N80 800V N-Channel MOSFET
FQA10N80C 800V N-Channel MOSFET
FQA10N80C_F109 N-Channel QFET MOSFET

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