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FQA8N80C_F109 - MOSFET

Product Overview

Fairchild Semiconductor

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FQA8N80C_F109 MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FQA8N80C_F109

Datasheet Details

Part number	FQA8N80C_F109
Manufacturer	Fairchild Semiconductor
File Size	786.84 KB
Description	MOSFET
Datasheet	FQA8N80C_F109 Datasheet
Additional preview pages of the FQA8N80C_F109 datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V.
Low gate charge ( typical 35 nC).
Low Crss ( typical 13pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant November 2007 QFET ®.

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Published: Jan 16, 2017 |