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FQA8N80C_F109 Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQA8N80C_F109 800V N-Channel MOSFET FQA8N80C_F109 800V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Key Features

  • 8.4A, 800V, RDS(on) = 1.55Ω @VGS = 10 V.
  • Low gate charge ( typical 35 nC).
  • Low Crss ( typical 13pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant November 2007 QFET ®.

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