FQB5N50CF Key Features
- 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V
- Low gate charge ( typical 18nC)
- Low Crss ( typical 15pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Part: FQB5N50CF
- Manufacturer: Fairchild (official site)
- Size: 726.58 KB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FQB5N50C | N-Channel MOSFET |
| FQB5N50 | 500V N-Channel MOSFET |
| FQB5N15 | 150V N-Channel MOSFET |
| FQB5N20 | 200V N-Channel MOSFET |
| FQB5N20L | 200V LOGIC N-Channel MOSFET |
FQB5N50CF Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies,...