FQB7N65C
Features
- -
- -
- - 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 n C) Low Crss ( typical 12 p F) Fast switching 100% avalanche tested Improved dv/dt capability
September 2006 ®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
D2-PAK
FQB Series
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Parameter
650 7 4.45 28 ± 30
(Note 2)...
