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* 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested I.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQB7N60

FQB7N10

FQB7N10L

FQB7N20

FQB7N20L

FQB7N30

FQB7N40

FQB7N80

FQB70N08

FQB70N10

FQB7P06

FQB7P20

FQB020ADC-007-M