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FQB7N65C - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ®.

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Datasheet Details

Part number FQB7N65C
Manufacturer Fairchild Semiconductor
File Size 1.16 MB
Description N-Channel MOSFET
Datasheet download datasheet FQB7N65C Datasheet
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www.DataSheet4U.com FQB7N65C 650V N-Channel MOSFET QFET FQB7N65C 650V N-Channel MOSFET Features • • • • • • 7A, 650V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability September 2006 ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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