FQB8N60CF
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V
- Low gate charge ( typical 28nC)
- Low Crss ( typical 12pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant D October 2008 QFETTM
