FQB8N60CF Datasheet | Fairchild Semiconductor

FQB8N60CF 600V N-Channel MOSFET 600V N-Channel MOSFET Features - 6.26A, 600V, RDS(on) = 1.5 Ω @VGS = 10 V - Low gate charge ( typical 28nC) - Low Crss ( typical 12pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - RoHS pliant October 2008 QFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched...