FQD10N20C Key Features
- 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A
- Low Gate Charge (Typ. 20 nC)
- Low Crss (Typ. 40.5 pF)
- 100% Avalanche Tested
| Part Number | Description |
|---|---|
| FQD10N20 | 200V LOGIC N-Channel MOSFET |
| FQD10N20L | N-Channel MOSFET |
| FQD11P06 | 60V P-Channel MOSFET |
| FQD12N20 | 200V N-Channel MOSFET |
| FQD12N20L | N-Channel MOSFET |