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FQD12N20LTM_F085 - 200V Logic Level N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V.
  • Low gate charge ( typical 16 nC).
  • Low Crss ( typical 17 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Low level gate drive requirement allowing direct opration from logic drivers.
  • Qualified to AEC Q101.
  • RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage.

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FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. Features • 9.0A, 200V, RDS(on) = 0.
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