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FQD12N20LTM_F085 - 200V Logic Level N-Channel MOSFET

Fairchild Semiconductor

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Datasheet Details

Part number: FQD12N20LTM_F085
Manufacturer: Fairchild Semiconductor
File Size: 639.88 KB
Datasheet: FQD12N20LTM_F085-FairchildSemiconductor.pdf
Description: 200V Logic Level N-Channel MOSFET

FQD12N20LTM_F085 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology..

Features

9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V.
Low gate charge ( typical 16 nC).
Low Crss ( typical 17 pF).
Fast switching.
100% avalanche tested.
Improved dv/dt capability.
Low level gate drive requirement allowing direct opration from logic drivers.
Qualified to AEC Q101.
RoHS Compliant D GS D-PAK Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS IAR Parameter Drain-Source Voltage.

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200V Logic Level N-Channel MOSFET Fairchild Semiconductor

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