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FQD12N20LTM_F085 Datasheet - Fairchild Semiconductor

200V Logic Level N-Channel MOSFET

FQD12N20LTM_F085 Features

* 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V

* Low gate charge ( typical 16 nC)

* Low Crss ( typical 17 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* Low level gate drive requirement allowing direct opration from logic

FQD12N20LTM_F085 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD12N20LTM_F085 Datasheet (639.88 KB)

Preview of FQD12N20LTM_F085 PDF

Datasheet Details

Part number:

FQD12N20LTM_F085

Manufacturer:

Fairchild Semiconductor

File Size:

639.88 KB

Description:

200v logic level n-channel mosfet.

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FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET Fairchild Semiconductor

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