FQD12N20LTM_F085 Datasheet | Fairchild Semiconductor

FQD12N20LTM_F085 200V Logic Level N-Channel MOSFET June 2010 200V Logic Level N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, motor control. Features - 9.0A, 200V, RDS(on) = 0.28Ω @VGS = 10 V - Low gate charge ( typical 16 n C) - Low Crss ( typical 17 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Low level gate drive requirement allowing direct opration from logic drivers - Qualified to AEC Q101 - Ro HS...