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FQD12P10 Datasheet 100v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD12P10 / FQU12P10 QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.

Key Features

  • -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D G S D-PAK FQD Series I-PAK G D S FQU Series G S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current.

Similar Datasheet

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FQD12P10 Distributor