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FQD12P10 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-100V.
  • ID =-9.4 A (VGS =-10V).
  • RDS(ON) ＜ 290mΩ (VGS =-10V) D.
  • Low gate charge.
  • Low Crss.
  • Fast switching G S +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +0 1.50 .15 -0.15 + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1.
  • Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain.

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SMD Type P-Channel MOSFET FQD12P10 (KQD12P10) MOSFET + 5.55 0.15 -0.15 ■ Features ● VDS (V) =-100V ● ID =-9.4 A (VGS =-10V) ● RDS(ON) ＜ 290mΩ (VGS =-10V) D ● Low gate charge ● Low Crss ● Fast switching G S +0 9.70 .2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 +0 1.50 .15 -0.15 + 0.50 0.15 -0.15 + 0.28 1 .5 0 -0.1 0.80+0.1 -0.1 0.127 m ax 2.3 4 .60 +0.15 -0.15 0.60+ 0.1 - 0.1 + 0.25 2 .6 5 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Avalanche Current Single Pulsed Avalanche Energy (Note.1) Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note.2) Power Dissipation Power Dissipation - Derate above 25°C Thermal Resistance.