FQD12P10 datasheet, mosfet equivalent, Fairchild Semiconductor

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FQD12P10 Features and benefits

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* -9.4A, -100V, RDS(on) = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche te.

FQD12P10 Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. TM Features
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FQD12P10 Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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