FQD20N06 Datasheet | Fairchild Semiconductor

FQD20N06 / FQU20N06 May 2001 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. Features - - - - - - - 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V...