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FQD20N06 - 60V N-Channel MOSFET

FQD20N06 Description

FQD20N06 / FQU20N06 May 2001 QFET FQD20N06 / FQU20N06 60V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQD20N06 Features

* 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating D D ! " G! G S ! " "

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