FQD20N06 Datasheet - Fairchild Semiconductor

60V N-Channel MOSFET

FQD20N06 Features

* 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating D D ! " G! G S ! " "

FQD20N06 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQD20N06 Datasheet (660.63 KB)

FQD20N06 Datasheet Preview — Preview of FQD20N06 PDF

Datasheet Details

Part number:

FQD20N06

Manufacturer:

Fairchild Semiconductor

File Size:

660.63 KB

Description:

60v n-channel mosfet.

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FQD20N06 60V N-Channel MOSFET Fairchild Semiconductor

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FQD20N06 Features

FQD20N06 General Description

Datasheet Details

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FQD20N06 Distributor