Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 17.2A, 60V, RDS(on) = 0.06Ω @ VGS = 10V Low gate charge ( typical 9.5 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers.
- Built-in ESD Protection Diode D D
G G S
D-PAK
FQD Series
I-PAK
G D S
FQU Series
S
Absolute Maximum Ratings
Symbol VDSS ID.
FQD20N06LE Datasheet
