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FQD20N06 Datasheet 60v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD20N06 / FQU20N06 May 2001 QFET FQD20N06 / FQU20N06 60V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Key Features

  • 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V Low gate charge ( typical 11.5 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQD20N06L 60V LOGIC N-Channel MOSFET
FQD20N06LE 60V LOGIC N-Channel MOSFET
FQD24N08 80V N-Channel MOSFET
FQD2N100 1000V N-Channel MOSFET
FQD2N30 300V N-Channel MOSFET
FQD2N40 400V N-Channel MOSFET
FQD2N50 500V N-Channel MOSFET
FQD2N50B 500V N-Channel MOSFET
FQD2N60 600V N-Channel MOSFET
FQD2N60C 600V N-Channel MOSFET

FQD20N06 Distributor