60v n-channel mosfet.
* 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V
* Low gate charge ( typical 19 nC)
* Low Crss ( typical 40 pF)
* Fast switching
* 100% avalanche tested
such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operat.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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