FQD30N06
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V
- Low gate charge ( typical 19 nC)
- Low Crss ( typical 40 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 150oC maximum junction temperature rating
- RoHS Compliant DD ! GS D-PAK FQD Series GDS I-PAK FQU Series
