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FQD30N06 - 60V N-Channel MOSFET

FQD30N06 Description

FQD30N06 / FQU30N06 FQD30N06 / FQU30N06 60V N-Channel MOSFET January 2009 QFET® General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQD30N06 Features

* 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V
* Low gate charge ( typical 19 nC)
* Low Crss ( typical 40 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 150oC maximum junction temperature rating
* RoHS Compliant

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