| Part Number | FQD30N06 |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel Enhancement Mode Power MOSFET is produced
using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state r.
* 22.7 A, 60 V RDS(on) = 45 mW (Max.) @ VGS = 10 V, ID = 11.4 A * Low Gate Charge (Typ. 19 nC) * Low Crss (Typ. 40 pF) * 100% Avalanche Tested * This Device is Pb *Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.) Symbol Parameter Value Unit VDSS ID. |
FQD30N06 Datasheet
The FQD30N06 is a N-Channel MOSFET.
| Part Number | FQD30N06 |
|---|---|
| Description | 60V N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V * Low gate charge ( typical 19 nC) * Low Crss ( typical 40 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * 150oC maximum junction temperature rating * RoHS Compliant DD ! GS D-PAK FQD Series GDS I-PAK FQU Series Absolute Max. |