Datasheet Details
| Part number | FQD30N06 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 702.95 KB |
| Description | 60V N-Channel MOSFET |
| Datasheet |
 FQD30N06 Datasheet
|
|
|
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Key Features
- 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V.
- Low gate charge ( typical 19 nC).
- Low Crss ( typical 40 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 150oC maximum junction temperature rating.
- RoHS Compliant DD ! GS D-PAK FQD Series GDS I-PAK FQU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage.