Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V.
- Low gate charge ( typical 19 nC).
- Low Crss ( typical 40 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 150oC maximum junction temperature rating.
- RoHS Compliant
DD
!
GS
D-PAK
FQD Series
GDS
I-PAK
FQU Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage.
FQD30N06 Datasheet
