FQD30N06 Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/...
FQD30N06 Key Features
- 22.7A, 60V, RDS(on) = 0.045Ω @ VGS = 10V
- Low gate charge ( typical 19 nC)
- Low Crss ( typical 40 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 150oC maximum junction temperature rating
- RoHS pliant