FQD30N06 - N-Channel MOSFET

onsemi

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

22.7 A, 60 V RDS(on) = 45 mW (Max. ) @ VGS = 10 V, ID = 11.4 A.
Low Gate Charge (Typ. 19 nC).
Low Crss (Typ. 40 pF).
100% Avalanche Tested.
This Device is Pb.
Free Halide, Free and RoHS Compliant MOSFET.

📥 Download Datasheet

FQD30N06 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FQD30N06
Manufacturer	onsemi
File Size	318.74 KB
Description	N-Channel MOSFET
Datasheet	FQD30N06 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FQD30N06	60V N-Channel MOSFET	Fairchild Semiconductor
FQD30N06L	60V LOGIC N-Channel MOSFET	Fairchild Semiconductor
FQD3N25	250V N-Channel MOSFET	Fairchild Semiconductor
FQD3N30	300V N-Channel MOSFET	Fairchild Semiconductor
FQD3N40	400V N-Channel MOSFET	Fairchild Semiconductor

Other Datasheets by onsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MOSFET – N-Channel QFET 1000 V, 8 A, 1.45 W FQD30N06 Description This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • 22.7 A, 60 V RDS(on) = 45 mW (Max.) @ VGS = 10 V, ID = 11.4 A • Low Gate Charge (Typ. 19 nC) • Low Crss (Typ. 40 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.