FQD30N06 Overview
This N−Channel Enhancement Mode Power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power...
FQD30N06 Key Features
- 22.7 A, 60 V RDS(on) = 45 mW (Max.) @ VGS = 10 V, ID = 11.4 A
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 40 pF)
- 100% Avalanche Tested
- This Device is Pb-Free Halide, Free and RoHS pliant
- Continuous (TC = 25°C)
- Continuous (TC = 100°C) Drain Current
- Pulsed (Note 1) Gate-Source Voltage Single Pulse Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanc
- (TC = 25°C)
- Derate Above 25°C
