Datasheet4U Logo Datasheet4U.com

FQD3N60C - 600V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V.
  • Low gate charge ( typical 10.5 nC).
  • Low Crss ( typical 5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability January 2006 QFET TM.

📥 Download Datasheet

Datasheet preview – FQD3N60C

Datasheet Details

Part number FQD3N60C
Manufacturer Fairchild Semiconductor
File Size 753.92 KB
Description 600V N-Channel MOSFET
Datasheet download datasheet FQD3N60C Datasheet
Additional preview pages of the FQD3N60C datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD3N60C FQD3N60C 600V N-Channel MOSFET Features • 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V • Low gate charge ( typical 10.5 nC) • Low Crss ( typical 5 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability January 2006 QFET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Published: |