FQD3P50
Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
- Low gate charge ( typical 18 nC)
- Low Crss ( typical 9.5 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS Compliant I-PAK FQU Series G! S ! * *
