FQD3P50 Overview
Key Specifications
Package: DPAK
Mount Type: Surface Mount
Pins: 3
Height: 2.517 mm
Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V
- Low gate charge ( typical 18 nC)
- Low Crss ( typical 9.5 pF)
- Fast switching
- 100% avalanche tested
