FQD3P50 Datasheet | Fairchild Semiconductor

FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET January 2009 QFET® General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for electronic lamp ballast based on plimentary half bridge. D-PAK FQD Series Features - -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V - Low gate charge ( typical 18 nC) - Low Crss ( typical 9.5 pF) - Fast switching -...